Devices, components and methods combining trench field plates with immobile electrostatic charge

ABSTRACT

N-channel power semiconductor devices in which an insulated field plate is coupled to the drift region, and immobile electrostatic charge is also present at the interface between the drift region and the insulation around the field plate. The electrostatic charge permits OFF-state voltage drop to occur near the source region, in addition to the voltage drop which occurs near the drain region (due to the presence of the field plate).

CROSS-REFERENCE

Priority is claimed from U.S. patent application 61/294,427 filed Jan.12, 2010, which is hereby incorporated by reference, and also from U.S.patent application 61/307,007 filed Feb. 23, 2010, which is also herebyincorporated by reference.

BACKGROUND

The present application relates to semiconductor devices, andparticularly to power semiconductor devices which use intentionallyintroduced permanent electrostatic charge in trenches which adjoinregions where current flows in the ON state.

Note that the points discussed below may reflect the hindsight gainedfrom the disclosed inventions, and are not necessarily admitted to beprior art.

Power MOSFETs are widely used as switching devices in many electronicapplications. In order to minimize the conduction power loss it isdesirable that power MOSFETs have a low specific on-resistance (R_(SP)or R*A), which is defined as the product of the on-resistance of theMOSFET multiplied by the active die area. In general, the on-resistanceof a power MOSFET is dominated by the channel resistance and the driftregion resistances which include the substrate resistance, spreadingresistance and the epitaxial (epi) layer resistance.

Recently, the so called super-junction structure has been developed toreduce the drift region resistance. The super-junction structureconsists of alternating highly doped p-type and n-type pillars orlayers. For a given breakdown voltage, the doping concentrations ofn-type pillar (the n-type drift region) can be one order of magnitudehigher than that of conventional drift region provided that the totalcharge of n-type pillar is designed to be balanced with charge in thep-type pillar. In order to fully realize the benefits of thesuper-junction, it is desirable to increase the packing density of thepillars to achieve a lower R_(SP). However, the minimum pillar widthsthat can be attained in practical device manufacturing set a limitationon the reducing the cell pitch and scaling the device.

Recently, inventions (see for example US application 20080191307 and USapplication 20080164518) have been disclosed to address this issue byincorporating fixed or permanent positive charge (Q_(F)) to balance thecharge of a p-type pillar in a diode or voltage blocking structure. Thepermanent charge can also form an electron drift region in a powerMOSFET, by forming an inversion layer along the interface between theoxide and P epi layer. By making use of that concept, the area scalinglimitation due to inter-diffusion of p-type pillar and n-type pillar wasmitigated. Consequently, a small cell pitch and high packing density ofpillars and channels was achieved, reducing the device totalon-resistance (and specific on-resistance R_(SP)). In addition, thestructure of FIG. 2 has a key advantage over conventional super-junctiondevices in that there is no JFET effect to limit the current so smallercell pitches are highly desirable.

SUMMARY

The present inventors have realized that there are several differentdevice structures that can use higher Q_(F) than that of the devicestructure shown in FIG. 2 without degrading breakdown voltage. Thus,among other teachings, the present application describes some ways toreduce the specific on-resistance R_(SP), for a given breakdown voltagespecification, by actually increasing the maximum breakdown voltage.

In one class of embodiments, this is done by introducing a buried fieldplate inside the trench. Several techniques are disclosed for achievingthis.

The disclosed innovations, in various embodiments, provide one or moreof at least the following advantages. However, not all of theseadvantages result from every one of the innovations disclosed, and thislist of advantages does not limit the various claimed inventions.

Lower specific on-resistance R_(SP),

Lower gate-drain charge Cgd.

Improved manufacturability.

Higher breakdown voltage

charge balancing;

uniform electric fields.

Improved quality control.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosed inventions will be described with reference to theaccompanying drawings, which show important sample embodiments of theinvention and which are incorporated in the specification hereof byreference, wherein:

FIG. 1 shows a vertical MOS transistor with trenches filled with gateand buried field plate electrodes and dielectric material containingpermanent positive charge (Q_(F)).

FIG. 2 schematically shows a MOSFET structure previously proposed byones of the present inventors, in which a fixed or permanent positivecharge (Q_(F)).

FIGS. 3A-3G show two-dimensional device simulations potential contour atavalanche breakdown results of the MOSFET structures shown in FIG. 1 andFIG. 2, together with plots of voltage and electric field versus depth

FIGS. 4A-4D show several examples of vertical MOS transistors withtrenches filled with buried field plate electrode and dielectricmaterial containing permanent positive charge (Q_(F)), according tovarious disclosed innovative embodiments.

FIGS. 5A-5C show several examples of vertical MOS transistors withtrenches filled with buried field plate electrode that extends towardsthe surface and dielectric material containing permanent positive charge(Q_(F)), according to various disclosed innovative embodiments.

FIGS. 6A-6F show several examples of vertical trench MOS transistorswith planar gate electrode, buried field plate electrode and dielectricmaterial containing permanent positive charge (Q_(F)), according tovarious disclosed innovative embodiments.

FIGS. 7A-7G show several examples of lateral trench MOS transistors withplanar gate electrode, buried field plate electrode and dielectricmaterial containing permanent positive charge (Q_(F)), according tovarious disclosed innovative embodiments.

FIGS. 8A-8C show several examples of vertical trench MOS transistorswith n-type columns, p-type columns and trenches filled with buriedfield plate and dielectric material containing permanent charge (Q_(F)),according to various disclosed innovative embodiments.

FIGS. 9A-9C show examples of termination structures using trenchesfilled with buried field plate and dielectric material containingpermanent charge (Q_(F)), according to various disclosed innovativeembodiments.

FIG. 10 shows two-dimensional device simulation results for thetermination structure using buried field plate and dielectric materialcontaining permanent charge (Q_(F)) shown in FIG. 9A.

DETAILED DESCRIPTION OF SAMPLE EMBODIMENTS

The numerous innovative teachings of the present application will bedescribed with particular reference to presently preferred embodiments(by way of example, and not of limitation). The present applicationdescribes several inventions, and none of the statements below should betaken as limiting the claims generally.

The present application describes several new device and fabricationconcepts, and many different ways to implement them. A number of theseconcepts and embodiments will be described in detail, but it must beremembered that the new concepts described here include some verybroadly applicable points.

The present inventors have realized that it is possible to reduce thespecific on-resistance R_(SP) by increasing the permanent charge Q_(F),while ALSO still meeting the required breakdown voltage. It is alsopossible, and desirable, to reduce the intrinsic capacitances of thedevice such as gate-to-drain capacitance (Cgd).

FIG. 2 shows one example of a trench transistor as described in thepublished applications referenced above. Here insulated gate electrodes212 are present in the upper parts of trenches 207, and thesemiconductor structure near the front surface includes a p-type bodyregion 206 which is contacted by a p+ body contact diffusion 210, aswell as an n+ source region 208. Positive permanent charge 216 ispresent near the trench sidewalls, and provides improved chargebalancing when the epitaxial layer 204 is depleted under reverse bias.The permanent charge also forms an induced drift region by forming aninversion layer along the interface between the oxide and the P-typelayer. Using this concept, the scaling limitation due to inter-diffusionof p-type pillar and n-type pillar can be eliminated. Consequently, asmall cell pitch and high packing density of pillars (and of channelarea) can be realized, to thereby reduce the device total on resistanceand R_(SP).

FIG. 1 shows a first example of an innovative structure. This exampleshows a trench MOSFET structure built on p-type epitaxial layer 104, aninsulated gate 112 and a buried or embedded field plate 121 inside atrench which is otherwise filled with dielectric 114. The insulated gate112 and embedded field plate 121 are formed using conducting materialsuch doped polysilicon. The buried field plate electrode 121 preferablycontacts the source electrode 101 at least at some places of the deviceor alternatively is left floating. The gate electrode 112 can invertnearby portions of a p-type body region 106 which is contacted by a p+body contact diffusion 110, as well as an n+ source region 108. Positivepermanent or fixed net electrostatic charge 116 is present near thetrench sidewalls, and provides improved charge balancing when theepitaxial layer 104 is depleted under reverse bias. Under theseconditions the buried field plate electrode 121 causes the electricfield to spread even more uniformly and hence a higher breakdown and/ora lower R_(SP) is achieved. Furthermore, the buried field plate 121helps to shield the gate electrode to reduce gate-drain capacitance Cgd.

In the ON state the permanent charge forms an induced drift region byforming an inversion layer along the interface between the oxide and theP-type layer 104. An adequate gate bias forms a channel region whereexcess electrons are present. Under these conditions electrons can flowfrom source 108, through the channel portion of p-type body region 106and inversion layer in drift region 104 (which in this example is simplya portion of the p-type epitaxial layer 104), to the drain 102. Sourcemetallization 101 makes ohmic contact to source diffusion 108 and to p+body contact region 110, and drain metallization 103 makes contact tothe drain 102. Thus the source, gate, and body in combination form acurrent-controlling structure, which (depending on the gate voltage) mayor may not allow injection of majority carriers into the drift region.It is noted that the oxide thickness at the channel region is thinnerthan that at the lower part of the trenches (along the sidewall andbottom) to withstand the higher voltage drop in this region.Furthermore, the dielectric material 114 thicknesses between the gateelectrode and buried field plate electrode, along trench sidewalls andtrench bottom are all independent design parameters.

One class of embodiments describes devices which include trenches withwalls covered by a dielectric material such as silicon dioxide thatcontains permanent or net electrostatic charges and a buried field plateelectrode made of conducting material such doped polysilicon. At reversebias voltage the positive permanent charge compensates negative chargeof the P region depletion charge as well as charge created on the buriedpolysilicon field plate. The electric field lines emanating from thepositive permanent charge terminate on both the P region's depletionregion negative charge as well as the buried field plate. This resultsin higher breakdown voltage for the same Q_(F), or alternatively higherQ_(F) values for the same breakdown voltage, as compared to the MOSFETstructure shown in FIG. 2.

FIGS. 3A, 3B, and 3C show simulation results for the two-dimensionalpotential contours at the onset of avalanche breakdown. The structuresused in the simulations include versions with and without a buried fieldplate electrode, but otherwise all other parameters are identical. Thecell pitch is 3 μm with trench width of about 1.5 μm and mesa width ofabout 1.5 μm. It should be noted that only a half cell is used forsimulations.

In the previously proposed structure shown in FIG. 2, the positivecharge Q_(F) provides improved balancing of the negative depletioncharge of the P drift region 204. The same effect occurs in the newstructure of FIG. 1, but (in addition) the electric field linesemanating from the positive permanent charge 116 terminate on both theburied field plate 121 and negative charge of the P region 104. Thisresults in a lower maximum electric field, and hence a higher breakdownvoltage.

Comparison of FIGS. 3B and 3C shows this in more detail. In FIG. 3B itcan be seen that (with a permanent positive charge of e.g. Q_(F)=2.2e12cm⁻², in a structure like that of FIG. 1) with the source and buriedfield plate grounded the breakdown voltage is increased from 40 volts(as in FIG. 3A) to 107 volts, due to the synergistically combinedeffects of the buried field plate and the electrostatic charge.Correspondingly, it can be seen that a higher voltage drop appearsacross the dielectric (e.g. silicon dioxide) at the trench sidewalls andbottom, i.e. between the buried field plate and silicon. This impliesthat the thickness of this dielectric must be large enough to withstandthe additional voltage drop which results from this differentisopotential map.

In this example, the p-type epi doping was taken to be 1.3e16 cm⁻³, butof course other target values can be used. There will also be somenormal process variation.

FIG. 3C shows simulation results for a structure with the samedimensions as that simulated in FIG. 3B, but with an importantdifference: in FIG. 3C the density of the immobile electrostatic chargehas been set to Q_(F)=1e10 cm⁻², which would be in the range ofunintentional background charge. (This value is dependent on theparticular process sequence, but any interface to crystallinesemiconductor material is likely to have some amount of charge per unitarea.)

In FIGS. 3B and 3C, the lines drawn onto the structural elements areisopotential contours. In each case, the applied voltage has beendivided into equal increments, to show these contours. Since the appliedvoltages in these two figures are different, the increment betweenneighboring isopotential contours is different, but the pattern of theisopotential contours is informative. The field plate itself, being aconductor, is all at a single voltage, so no lines of isopotentialactually intersect the surface of the field plate. However, many linesof isopotential can be followed through the semiconductor material andthe dielectric material.

By comparing these contours in FIGS. 3B and 3C, it can be seen that thepotential contours are much more evenly spaced in the semiconductormaterial, in the structure of FIG. 3B. This can be better understood bylooking at a plot of voltage versus depth: FIG. 3D shows voltage(potential) as a function of depth for the structure simulated in FIG.3B, and FIG. 3E shows potential as a function of depth for the structuresimulated in FIG. 3C. The flat portion at the right of each of thesecurves shows the drain voltage, which is different for the twosimulations. Note that the curve in FIG. 3D has more of a steady rise,whereas the curve in FIG. 3E is flatter at the left side, and has asharper rise near the flat portion at the right.

The next pair of Figures is based on the same pair of simulations: FIG.3F shows the magnitude of the electric field as a function of depth forthe structure simulated in FIG. 3B, and FIG. 3G shows the magnitude ofthe electric field as a function of depth for the structure simulated inFIG. 3C. In each case breakdown will occur when the electric fieldreaches the critical value of about 3.3E5 V/cm anywhere in theconduction path. In FIG. 3F it happens that this occurs near both thesurface and the N+P drift junction of the device, but a more importantdifference is that the electric field away from the location ofbreakdown averages out to be a much higher fraction of the criticalelectric field in FIG. 3F than in FIG. 3G. Since these two examples havethe same dimensions and (in most respects) parameters, the higheraverage field, away from the location of breakdown, means that a highertotal voltage drop can be accommodated in the case of FIG. 3B than inthe case of FIG. 3C. (In practice, breakdown of the junction between N+substrate 102 and p-type epitaxial layer 104 might limit the breakdownof the structure simulated in FIG. 3C to even less than 53 Volts.)

This is a somewhat qualitative observation. As one way to quantify it,we can note that in the example of FIG. 3B, the local maximum of theelectric field occurs at scaled depth −7.2, and the third of the driftregion closest to the depth of that maximum (i.e. between scaled units−7.2 and −5.5 on the y-axis) contains only about 37% of the totalvoltage drop. By contrast, in the example of FIG. 3C, the local maximumof the electric field occurs at scaled depth −1.0, and the third of thedrift region closest to the depth of that maximum (i.e. between scaledunits −1.0 and −3 on the y-axis) contains almost 100% of the totalvoltage drop (i.e. 53V between scaled depths −7.2 and −1.0). Stateddifferently, the two-thirds of the drift region thickness which are notadjacent to the location of breakdown carry more than 60% of the totalvoltage drop in FIG. 3B, but none of the total voltage drop in theexample of FIG. 3C.

Another way to characterize the differences which result from thecombination of a field plate with an optimal level of fixedelectrostatic charge, in the example of FIG. 1, is to note how muchvoltage drop occurs in the top one-third of the drift layer. In thesimulation of FIG. 3B, about 35V is dropped across this thickness,whereas in the example of FIG. 3C almost no voltage is dropped acrossthis thickness. That is, the presence of the field plate creates a localmaximum near the bottom corner of the field plate, but the presence offixed electrostatic charge increases the electric field in the top thirdof the drift region, and hence permits a larger total voltage to bewithstood before breakdown.

Another way to describe the important differences between the casessimulated in FIGS. 3B and 3C is to note that the electric field profilesof FIGS. 3F and 3G both have two local maxima, but the ratios of maximumto minimum are very different. In FIG. 3F the lesser of the two maximais about 95% of the critical field, whereas in FIG. 3G the lessermaximum is only about 40% of the critical voltage. Thus another of theteachings of the present application is that is desirable to have anelectric field profile which, at breakdown, has a secondary localmaximum of at least 50% of the overall maximum field in the drift region(i.e. the critical breakdown field). It is even more preferable to havethe secondary local maximum be at least 70% of the maximum field, andmore preferable yet to have the secondary local maximum in the range of85% to 100% of the maximum.

FIG. 4A shows another example of a trench MOSFET structure. This exampleis generally somewhat similar to that shown in FIG. 1, except that thetrench top portion width 407A is wider than the bottom portion 407B. Thewider top of the trench results in an easier process to fill the trenchwith dielectric material.

FIG. 4B shows another example of a trench MOSFET structure which isgenerally somewhat similar to that shown in FIG. 1, except that thetrench sidewall oxide is stepped. This results in a wider buried fieldplate width in the top portion of the trench 421A than the lower portion421B. This results in a gradation of the field plate field shapingeffect, i.e. more uniform electric field distribution or higherbreakdown voltage.

FIG. 4C shows another example of a trench MOSFET structure which isgenerally somewhat similar to that shown in FIG. 1, except that alightly doped N drift layer 402A is formed on top of the heavily dopedN+ substrate 402B. This increases the breakdown voltage of the substratediode.

FIG. 4D shows yet another example of a trench MOSFET structure which isgenerally somewhat similar to that shown in FIG. 1, except that gateelectrode 412 extends to the bottom of the trench. In the ON state thegate bias enhances the inversion charge in the drift region and resultsin lower R_(SP). However, the gate drain capacitance Cgd is increased.

FIG. 5A shows one example of a trench MOSFET structure which isgenerally somewhat similar to that shown in FIG. 1, except that theburied field plate electrode 521 extends upwards and is surrounded bythe insulated gate electrode 512. This provides a simpler processingthan the device shown in FIG. 1 particularly for higher voltage deviceswhere wider trench widths can be used.

FIG. 5B shows another example of a trench MOSFET structure which isgenerally somewhat similar to that shown in FIG. 5A, except that thep-type drift layer 504 is replaced by a lightly doped N− drift layer502A that is formed on top of the heavily doped N+ substrate 502B. Itshould be noted that in the ON state the positive permanent charge 516creates an induced accumulation layer in the N− drift region 502A thatenhances current conduction and results in a lower Rsp. The doping ofthe N− drift layer 502A is chosen to support the desired breakdownvoltage. Furthermore using an N− drift layer a conventional terminationstructure can be used.

FIG. 5C shows another example of a trench MOSFET structure which isgenerally somewhat similar to that shown in FIG. 5A, except that theburied field plate electrode is contacted at the surface to the sourcemetal 501.

In another class of examples the insulated gate is located on top of thesilicon surface rather than inside a trench. FIG. 6A shows one exampleof a trench MOSFET structure built on p-type epitaxial layer and aninsulated planar gate 612 and a buried or embedded field plate 621formed inside the trench which is otherwise filled with dielectric 614.The insulated planar gate 612 and embedded field plate are formed usingconducting material such doped polysilicon. The buried field plateelectrode 621 preferably contacts the source electrode 601 at least atsome places of the device, or alternatively is left floating. The gateelectrode 612 can invert nearby portions of a p-type body region 606which is contacted by a p+ body contact diffusion 610, and which alsoabuts an n+ source region 608. Positive permanent or fixed netelectrostatic charge 616 is present near the trench sidewalls, andprovides improved charge balancing when the epitaxial layer 604 isdepleted under reverse bias. Under these conditions the buried fieldplate electrode 621 causes the electric field to spread even moreuniformly and hence a higher breakdown and/or a lower R_(SP) isachieved. Furthermore, the buried field plate 621 helps to shield thegate electrode to reduce gate-drain capacitance Cgd.

In the ON state the permanent charge forms an induced drift region byforming an inversion layer along the interface between the oxide and theP-type layer 604. An adequate gate bias forms a channel region whereexcess electrons are present. Under these conditions electrons can flowlaterally from source 608, through the channel portion of p-type bodyregion 606 to an optional surface n layer 630. Electrons then flowvertically through the inversion drift region 604 (which in this exampleis simply a portion of the p-type epitaxial layer 604), to the drain602. Source metallization 601 makes ohmic contact to source diffusion608 and to p+ body contact region 610, and drain metallization 603 makescontact to the drain 602. Thus the source, gate, and body in combinationform a current-controlling structure, which (depending on the gatevoltage) may or may not allow injection of majority carriers into thedrift region. It is noted that the oxide thickness along the sidewallsand bottom should be adequate to withstand the required voltage drop.

FIG. 6B shows another example of a trench MOSFET structure which isgenerally somewhat similar to that shown in FIG. 6A, except that theburied field plate electrode is contacted to the planar gate forming oneelectrode 620.

FIG. 6C shows another example of a MOSFET structure which is generallysomewhat similar to that shown in FIG. 6A, except that it has aself-aligned lightly doped n source and drain regions 640 and anoptional anti-punch through and threshold adjustment p-type region 650.Furthermore, a surface electrode 622 is used to shield the gateelectrode 660 to lower gate-drain capacitance Cgd. The gate electrodeand shield electrodes 640 and 622 can be optionally silicided to lowertheir sheet resistance.

FIG. 6D shows another example of a MOSFET structure which is generallysomewhat similar to that shown in FIG. 6A, except that a lightly doped Ndrift layer 602A is formed on top of the heavily doped N+ substrate602B.

FIG. 6E shows another example of a MOSFET structure which is generallysomewhat similar to that shown in FIG. 6D, except that the trench 607extends only to a lightly doped N drift layer 602A.

FIG. 6F shows another example of a MOSFET structure which is generallysomewhat similar to that shown in FIG. 6E, except that the lightly dopedN layer 602A is replaced a local lightly doped N drift layer 670. The Ndrift layer 670 can be formed for example by implanting phosphorus orother donor type doping through the bottom of the trench.

In another class of examples the MOSFET is a lateral device where thesource, gate and drain electrodes are accessible from the devicesurface. FIG. 7A shows a top view of an example of a Lateral MOSFETstructure, and FIGS. 7B and 7C show cross-sectional views of the samedevice, taken along line AA′ and BB′ as shown in FIG. 7A. In thisexample, the n-channel lateral semiconductor device includes an n+source 708, a p-type body region 706 which separates the source 708 froma drift region 704, an n-type deep drain 702B, and an n+ shallow draindiffusion 702A. The drift region 704 is relatively lightly doped, and inthis example is p-type. Source metal 701 makes contact to the body 706(through p+ body contact diffusion 710) and source regions, while drainmetal 703 makes ohmic contact to the drain. The device includes lateraltrenches 707 filled with dielectric material 714 and a buried fieldplate 721. The buried field plate 721 is preferably connected to thesource metal 701 at least in some places of the device (not shown).Positive permanent or fixed net electrostatic charge is present near thetrench sidewalls, and provides improved charge balancing when the Player 704 is depleted under reverse bias. Under these conditions theburied field plate electrode 721 causes the electric field to spreadeven more uniformly and hence a higher breakdown and/or a lower R_(SP)is achieved. Furthermore, the field plate 711 helps to shield the gateelectrode to reduce gate-drain capacitance Cgd and is preferablyconnected to the buried field plate 721 as shown in FIG. 7C.

In the ON state the permanent charge forms an induced drift region byforming an inversion layer along the interface between the oxide and theP-type layer 704. It is noted that the oxide thickness at the channelregion is thinner than that at surrounding the trench 707 to withstandthe higher voltage drop in this region. Conductive gate electrode 712 iscapacitively coupled to a surface portion of the body 706, to invert it(and thereby allow conduction) when the voltage on 712 is sufficientlypositive. (This portion of the body is therefore referred to as a“channel,” but is not separately indicated in this figure.) The electroncurrent flows from the channel through the induced inversion layer inthe drift region 704 to the drain.

FIG. 7D shows another example of a MOSFET structure which is generallysomewhat similar to that shown in FIG. 7B, except that an additionaln-surface layer 790 is added to provide an additional current path tolower R_(SP).

FIG. 7E shows another example of a MOSFET structure which is generallysomewhat similar to that shown in FIG. 7B, except that an additional nburied layer 795 provides an additional current path and lowers R_(SP).

FIG. 7F shows another example of a MOSFET structure which is generallysomewhat similar to that shown in FIG. 7A, except that trenches 707 andburied field plate electrodes 721 are tapered from source to drain.

FIG. 7G shows yet another example of a MOSFET which is generallysomewhat similar to that shown in FIG. 7B, except that this example isbuilt on dielectric material 714B.

In another class of examples n-type and p-type columns are used toimprove the electric field uniformity at reverse bias conditions and thespreading of current spread in the ON state. These improvements resultsin higher breakdown voltages and lower R_(SP).

FIG. 8A shows one example of a trench MOSFET structure which isgenerally somewhat similar to that shown in FIG. 2, except that the Pregion 204 is replaced by n-columns 840 and p-columns 850. An insulatedgate 812 and a buried or embedded field plate 821 inside a trench whichis otherwise filled with dielectric 814. The gate electrode 812 caninvert nearby portions of a p-type body region 806, which is contactedby a p+ body contact diffusion 810, and which also abuts an n+ sourceregion 808. Positive permanent or fixed net electrostatic charge 816 ispresent near the trench sidewalls, and provides improved chargebalancing of the p-columns 850 when depleted under reverse bias. Underthese conditions the buried field plate electrode 821 causes theelectric field to spread even more uniformly and hence a higherbreakdown voltage. Furthermore, the buried field plate 821 helps toshield the gate electrode to reduce gate-drain capacitance Cgd. In theON state the permanent charge forms an induced drift region by formingan electron accumulation layer along the interface between the oxide andthe N-type layer 840. An adequate gate bias forms a channel region whereexcess electrons are present. Under these conditions electrons can flowfrom source 808, through the channel portion of p-type body region 806and the combination of the accumulation layer and drift region 840.Source metallization 801 makes ohmic contact to source diffusion 808 andto p+ body contact region 810, and drain metallization 803 makes contactto the drain 802.

FIG. 8B shows another example of a trench MOSFET structure which isgenerally somewhat similar to that shown in FIG. 8A, except that thep-type columns 851 is adjacent to the trench and an additional n-layer890. In the ON state the electron current flows from the channel throughthe inversion layer formed due to positive permanent charge.Furthermore, the n-layer 890 and n-columns 841 provide an additionalcurrent path and a lower R_(SP) is achieved. In the OFF state betweenthe positive depletion charge of the n-column 841 and permanent charge816 is mainly balanced by the negative depletion charge of the p-column851. In one example the doping concentration of the n-layer 890 is about1e16 cm⁻³, the n-column 841 is 5e15 cm⁻³ and the p-type column 851 is1.5e16 cm⁻³.

FIG. 8C shows yet another example of a trench MOSFET structure which isgenerally somewhat similar to that shown in FIG. 8A, except that theburied field plate electrode 821 extends upwards towards the surface andis surrounded by the gate electrode 812.

In addition, device edge or junction termination is needed and simpleand area efficient edge termination structures are also disclosed inthis application. The new termination structures are illustrated in FIG.9A, FIG. 9B, and FIG. 9C. Dielectric layer such as silicon dioxide 914covers the device surface and its thickness is chosen to support therequired breakdown voltage. Positive permanent or fixed netelectrostatic charge 916 is present near the trench sidewalls, andprovides improved charge balancing when the epitaxial layer 904 isdepleted under reverse bias. Under these conditions the buried fieldplate electrode 921 causes the electric field to spread even moreuniformly. Furthermore, the buried field plate electrode 921 extendsover the surface and forms a surface field plate. Source metal 901 formsan additional field plate and contacts p+ layer 910.

FIG. 9B shows another example of a termination structure which isgenerally somewhat similar to that shown in FIG. 9A, except that thesource metal 901 contacts the buried field plate electrode 921 insidethe trench.

FIG. 9C shows yet another example of a termination structure which isgenerally somewhat similar to that shown in FIG. 9A, except that thedrift layer 904 is replaced by p-type well region 904A that issurrounded by epitaxial n-type epitaxial layer 902B.

The off-state blocking characteristics of the new edge terminationstructure shown in FIG. 9A have been simulated, and the results areshown in FIG. 10. The potential contours at the onset of the edgestructures breakdown show that the new edge structure can terminatedevice junction in a very efficient manner, and the terminationbreakdown capability can be controlled by properly adjusting thepermanent charge density Q_(F).

According to some but not necessarily all implementations, there isprovided: A semiconductor device, comprising: a current-controllingstructure, which injects electrons into a p-type semiconductor driftregion under some but not all conditions; a trench, abutting said driftregion, which contains one or more conductive field plates, and whichalso contains immobile net electrostatic charge in a concentrationsufficient to invert portions of said p-type drift region in proximityto said trench; and an n-type drain region underlying said drift region;wherein said immobile net electrostatic charge is present in asufficient quantity that the peak electric field at breakdown, in thetop one-third of the depth over which said field plates collectivelyextend, which is more than half of the peak electric field in the bottomone-third of the depth over which said field plates collectively extend.

According to some but not necessarily all implementations, there isprovided: A semiconductor device, comprising: a current-controllingstructure, which injects first-type charge carriers into a semiconductordrift region under some but not all conditions; a trench, abutting saiddrift region, which contains one or more conductive field plates, andwhich also contains immobile net electrostatic charge; and an n-typedrain region underlying said drift region; wherein said immobile netelectrostatic charge is present in a sufficient quantity that, in saiddrift region at breakdown, the voltage drop across the top one-third ofthe vertical extent of said field plates collectively is more thanone-third of the voltage drop across the bottom one-third of the depthover which said field plates collectively extend.

According to some but not necessarily all implementations, there isprovided: A semiconductor device, comprising: a current-controllingstructure, which injects electrons into a p-type semiconductor driftregion under some but not all conditions; a trench, abutting said driftregion, which contains one or more conductive field plates, and whichalso contains immobile net electrostatic charge in a concentrationsufficient to invert portions of said p-type drift region in proximityto said trench; and an n-type drain region underlying said drift region;wherein the minimum cross-sectional area of said field plate(s) is morethan 25% of the minimum cross-sectional area of said trench in proximityto said drift region.

According to some but not necessarily all implementations, there isprovided: A semiconductor device, comprising: a current-controllingstructure, which injects first-type charge carriers into a semiconductordrift region under some but not all conditions; a trench, abutting saiddrift region, which contains one or more conductive field plates, andwhich also contains immobile net electrostatic charge of at least 5E10cm⁻², wherein said field plates collectively have a vertical extentwhich is more than 50% of that of said trench in proximity to said driftregion.

According to some but not necessarily all implementations, there isprovided: A semiconductor device, comprising: a current-controllingstructure, which injects first-type charge carriers into a semiconductordrift region under some but not all conditions; a trench, abutting saiddrift region, which contains one or more conductive field plates, andwhich also contains immobile net electrostatic charge of at least 5E10cm⁻², wherein said field plates collectively have a volume which is morethan 50% of that of said trench in proximity to said drift region.

According to some but not necessarily all implementations, there isprovided: A semiconductor device, comprising: a current-controllingstructure, which injects electrons into a p-type semiconductor driftregion under some but not all conditions; a trench, abutting said driftregion, which contains at least one conductive field plates, and whichalso contains immobile net electrostatic charge in a concentrationsufficient to invert portions of said p-type drift region in proximityto said trench; and an n-type drain region underlying said drift region;wherein said field plate has sidewalls which are predominantly verticaland parallel to a sidewall of said trench.

According to some but not necessarily all implementations, there isprovided: A semiconductor device, comprising: an n-type source, a p-typebody region, and an insulated gate electrode which is capacitivelycoupled to invert portions of said body region and thereby injectelectrons into a semiconductor drift region; a trench, abutting saiddrift region, which contains one or more conductive field plates, andwhich also contains immobile net electrostatic charge; and an n-typedrain region drain region, which is separated from said body by saiddrift region; wherein said immobile net electrostatic charge is presentin a sufficient quantity that, at breakdown, the voltage drop across theone-third of said drift region nearest said source region is more thanone-third of the voltage drop across the one-third of said drift regionnearest said drain.

According to some but not necessarily all implementations, there isprovided: A method of operation of a power semiconductor device,comprising: in the ON state, applying a voltage to a gate electrode tothereby permit injection of majority carriers from afirst-conductivity-type source region, by inverting a portion of asecond-conductivity-type body region, into a second-conductivity-typedrift region, which is partially inverted by immobile electrostaticcharge in a trench which adjoins said drift region; and wherein, in theOFF state, an insulated field plate, which is present in said trench, iscapacitively coupled to said drift region to thereby result in a firstlocally maximal electric field near a bottom corner of said field plate,and said immobile electrostatic charge at least partially balances thespace charge of depleted portions of said drift region, and augments asecond locally maximal electric field near a top corner of said fieldplate.

Modifications and Variations

As will be recognized by those skilled in the art, the innovativeconcepts described in the present application can be modified and variedover a tremendous range of applications, and accordingly the scope ofpatented subject matter is not limited by any of the specific exemplaryteachings given. It is intended to embrace all such alternatives,modifications and variations that fall within the spirit and broad scopeof the appended claims.

For one example, the disclosed teachings can also be implemented inlateral semiconductor devices. In this case the density of fixed chargeQ_(F) is preferably graded laterally. This can be done, for example, byimplanting through a tapered layer, or by using a process which includessome lateral erosion of photoresist or other patterned layer.

The above descriptions of charge balance assume that the backgrounddoping of the semiconductor material is constant at a given depth, butthis too is another device parameter which can be adjusted.

For example, the disclosed inventions can also be applied to processeswhere doping is laterally outdiffused from trenches.

Furthermore, in other embodiments the P epitaxial region can be replacedby an implanted or diffused P-well region.

The doping levels needed to achieve high breakdown and low-resistanceare governed by the well known charge balance condition. The specificelectrical characteristics of devices fabricated using the methodsdescribed in this disclosure depend on a number of factors including thethickness of the layers, their doping levels, the materials being used,the geometry of the layout, etc. One of ordinary skill in the art willrealize that simulation, experimentation, or a combination thereof canbe used to determine the design parameters needed to operate asintended.

While the figures shown in this disclosure are qualitatively correct,the geometries used in practice may differ and should not be considereda limitation in anyway. It is understood by those of ordinary skill inthe art that the actual cell layout will vary depending on the specificsof the implementation and any depictions illustrated herein should notbe considered a limitation in any way.

While only n-channel MOSFETs are shown here, p-channel MOSFETs arerealizable with this invention simply by changing the polarity of thepermanent charge and swapping n-type and p-type regions in any of thefigures. This is well known by those of ordinary skill in the art.

It should be noted in the above drawings the positive and permanentcharge was drawn for illustration purpose only. It is understood thatthe charge can be in the dielectric (oxide), at the interface betweenthe silicon and oxide, inside the silicon layer or a combination of allthese cases.

It is understood by those of ordinary skill in the art that othervariations to the above embodiments can be realized using other knowntermination techniques.

It is also understood that this invention is also valid if the oppositepolarity of the permanent electrostatic charge, i.e. negative charge,and the opposite semiconductor conductivity types are used.

It is also understood that numerous combinations of the aboveembodiments can be realized.

None of the description in the present application should be read asimplying that any particular element, step, or function is an essentialelement which must be included in the claim scope: THE SCOPE OF PATENTEDSUBJECT MATTER IS DEFINED ONLY BY THE ALLOWED CLAIMS. Moreover, none ofthese claims are intended to invoke paragraph six of 35 USC section 112unless the exact words “means for” are followed by a participle.

Additional general background, which helps to show variations andimplementations, as well as some features which can be synergisticallywith the inventions claimed below, may be found in the following USpatent applications. All of these applications have at least some commonownership, copendency, and inventorship with the present application:All of these applications, and all of their priority applications, arehereby incorporated by reference: US20080073707, US20080191307,US20080164516, US20080164518, US20080164520, US20080166845,US20090206924, US20090206913, US20090294892, US20090309156,US20100013552, US20100025726, US20100025763, US20100084704,US20100219462, US20100219468, US20100214016, US20100308400,US20100327344, and unpublished U.S. application Ser. Nos. 12/431,852;12/369,385; 12/720,856; 12/759,696; 12/790,734; 12/834,573; 12/835,636;12/887,303; and 12/939,154. Applicants reserve the right to claimpriority from these applications, directly or indirectly, andtherethrough to even earlier applications, in all countries where suchpriority can be claimed.

The claims as filed are intended to be as comprehensive as possible, andNO subject matter is intentionally relinquished, dedicated, orabandoned.

1-24. (canceled)
 25. A semiconductor device, comprising: acurrent-controlling structure, which injects first-type charge carriersinto a semiconductor drift region under some but not all conditions; atrench, abutting said drift region, which contains one or moreconductive field plates, and which also contains immobile netelectrostatic charge of at least 5E10 cm⁻², and a drain region; whereinsaid field plates collectively have a vertical extent which is more than50% of that of said trench in proximity to said drift region.
 26. Thedevice of claim 25, wherein said first conductivity type is n-type. 27.The device of claim 25, wherein said first-type charge carriers areelectrons.
 28. The device of claim 25, wherein said drift regionconsists essentially of silicon.
 29. The device of claim 25, whereineach said trench includes only one said field plate.
 30. The device ofclaim 25, comprising a plurality of said trenches.
 31. The device ofclaim 25, wherein said field plate is heavily doped polysilicon.
 32. Thedevice of claim 25, wherein said current-controlling structure comprisesa first-conductivity-type source region, and a gate electrode which iscapacitively coupled to a second-conductivity-type body region.
 33. Thedevice of claim 25, wherein said field plate is insulated from saiddrift region by silicon dioxide.
 34. The device of claim 25, whereinsaid drift region includes paralleled p-type and n-type regions.
 35. Thedevice of claim 25, wherein said current-controlling structure comprisesa vertical field-effect-transistor channel.
 36. A semiconductor device,comprising: a current-controlling structure, which injects first-typecharge carriers into a semiconductor drift region under some but not allconditions; a trench, abutting said drift region, which contains one ormore conductive field plates, and which also contains immobile netelectrostatic charge of at least 5E10 cm⁻², wherein said charge carrierscan pass through said drift region to a first-conductivity-type drainregion; and wherein said field plates collectively have a volume whichis more than 50% of that of said trench in proximity to said driftregion.
 37. The device of claim 36, wherein said first-type chargecarriers are electrons, and wherein said drain is n-type.
 38. The deviceof claim 36, wherein said drift region consists essentially of silicon.39. The device of claim 36, wherein each said trench includes only onesaid field plate.
 40. The device of claim 36, comprising a plurality ofsaid trenches.
 41. The device of claim 36, wherein said field plate isheavily doped polysilicon.
 42. The device of claim 36, wherein saidcurrent-controlling structure comprises a first-conductivity-type sourceregion, and a gate electrode which is capacitively coupled to asecond-conductivity-type body region.
 43. The device of claim 36,wherein said field plate is insulated from said drift region by silicondioxide. 44-46. (canceled)
 47. A semiconductor device, comprising: ann-type source, a p-type body region, and an insulated gate electrodewhich is capacitively coupled to invert portions of said body region andthereby inject electrons into a semiconductor p-type drift region; atrench, abutting said drift region, which contains at least oneconductive field plate, and which also contains immobile netelectrostatic charge in a concentration sufficient to invert portions ofsaid p-type drift region in proximity to said trench; and an n-typedrain region underlying said drift region; wherein said field plate hassidewalls which are predominantly vertical and parallel to a sidewall ofsaid trench. 48-61. (canceled)